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 MOSFET

 

Key Features:
  • Advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. 
  • <100nA Gate Current
  • >30V Drain-Source Breakdown
  • Used a load switch or in
    PWM applications. 
  • Source leads are separated
    to allow a Kelvin connection to the source
  • ID = 8.5A
  • RDS(ON) < 24mΩ (VGS = 10V)
  • RDS(ON) < 30mΩ (VGS = 4.5V)
  • RDS(ON) < 48mΩ (VGS = 2.5V)